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 AME, Inc.
AME9001
CCFL Backlight Controller
n General Description
The AME9001 controller provides a cost efficient means to drive single or multiple cold cathode fluorescent lamps (CCFL). Specifically the AME9001 drives 3 external MOSFETs that, in turn, drive a wirewound transformer that is coupled to the CCFL. The AME9001 includes features such as soft start, duty cycle dimming control, and fault detection. It is designed to work with input voltages from 7V up to 24V. When disabled the circuit goes into a zero current mode. For applications that use a piezoelectric transformer please look at the AME9000.
n Pin Configuration
24 23 22 21 20 19 18 17 16 15 14 13
AME9001
1
2
3
4
5
6
7
8
9
10
11
12
AME9001 24PIN QSOP
1. VREF 2. CE 3. SSC 4. RDELTA 5. FAULTB 6. RT2 7. VSS 8. OVP 9. CS 10.CSCOMP 11.CSDET 12.NC 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. OUTC OUTAPB OUTA VBATT VDD1 VDD CT1 FB COMP BRIGHT SSV PNP
n Features
l Small package: 24 pin QSOP l Drives multiple tubes l Automatically checks for common fault conditions l 7.0V < Vbatt < 24V l Low component count l Low Idd < 3.5mA l <1uA shutdown mode
Controller
n System Block Diagram
External Components CCFL Array
n Applications
l Notebook computers l LCD/TFT displays
AME 9001
LIGHT
+ Resistors + Capacitors
N
1
AME, Inc.
AME9001
CCFL Backlight Controller
n Pin Description
Pin #
1 2
Pin Name
VREF CE
Pin Description
Reference. Compensation point for the 3.4V internal voltage reference. Must have bypass capacitor connected here to VSS. Chip enable. When low (<0.4V) the chip is put into a low current (~0uA) shutdown mode. Blanking interval ramp. During the first cycle this pin sources 1m A. During subsequent cycles it sources 150m A. This is primarily used to provide a "blanking interval" at the beginning of every dimming cycle to temporarily disable the fault protection circuitry. (See application notes.) A resistor connected from this pin to VBATT modulates the switching frequency as a function of battery voltage. 0.1 m F cap to VSS. A resistor from this pin to VSS sets the minimum frequency of the VCO. The voltage at this pin is 1.5V Negative supply. Connect to system ground. Over voltage protection input. Indirectly senses the voltage at the secondary of the transformer through a resistor (or capacitor) divider. It will immediately turn the circuit off if the voltage at OVP is over 3V. It will also turn the chip off if the voltage at OVP is less than 250mV for 4 successive clock cycles after the voltage at SSC has risen above 3V (SSC>3V). Negative input of the auxiliary error amplifier(EA2). In this application it is normally shorted to CSCOMP Output of the auxiliary error amplifier(EA2). In this application the auxiliary error amp is in a unity gain configuration and the voltage at CSCOMP =1.25V as long as SSC > 1.25V. Otherwise CSCOMP is clamped to the voltage at SSC. Current sense detect. Connect this pin to the CCFL current sense resistor divider. If this pin is below 250mV for 4 consecutive clock cycles after SSC > 3V then the circuit will shutdown. Must float. Drives one of the external NFETs, opposite phase of OUTAPB. Drives one of the external NFETs, opposite phase of OUTC. Drives the high side PFET. Battery input. This is the positive supply for the OUTA driver. Must be tied to VDD. Regulated 5V supply input. Sets the dimming cycle frequency. Usually about 100Hz. Negative input of the voltage control loop error amplifier. Output of the voltage control loop error amplifier. Brightness control input. A DC voltage on this controls the duty cycle of the dimming cycle. This pin is compared to a 3V ramp at the CT1 pin. Soft start ramp for the voltage control loop. (20uA source current.) Drives the base of an external PNP transistor used for the 5V LDO.
3
SSC
4 5 6 7
RDELTA FAULTB RT2 VSS
8
OVP
9 10
CS CSCOMP
11 12 13 14 15 16 17 18 19 20 21 22 23 24
2
CSDET NC OUTC OUTAPB OUTA VBATT VDD1 VDD CT1 FB COMP BRIGHT SSV PNP
AME, Inc.
AME9001
CCFL Backlight Controller
n Ordering Information
Part Number
AME9001AETH
Marking
AME9001AETH xxxxxxxxHN yyww
Output Voltage
N/A
Package
QSOP-24
Operating Temp. Range
- 40oC to + 85oC
" xxxxxxxx HN " for Internal code
n Absolute Maximum Ratings
Parameter
Battery Voltage (VBATT) ESD Classification
Maximum
25 B
Unit
V
Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device
n Recommended Operating Conditions
Parameter
Battery Voltage (VBATT) Ambient Temperature Range Junction Temperature
Rating
7 - 24 - 40 to + 85 - 40 to + 125
Unit
V
o
C C
o
n Thermal Information
Parameter
Thermal Resistance (QSOP - 24) Maximum Junction Temperature Maximum Lead Temperature (10 Sec)
Maximum
325 150 300
Unit
o
C/W
o
C C
o
3
AME, Inc.
AME9001
CCFL Backlight Controller
n Electrical Specifications
TA= 25OC unless otherwise noted, VBATT = 15V, CT1 = 0.01uF, RT2 = 56K
Parameter 5V supply (VSUPPLY) Output voltage Line regulation Load regulation Temperature drift 3.4V reference (VREF) Initial voltage Line regulation Temperature drift VREF V REFLINE V REFTC Vbatt = 15V, Iref = 0 7< Vbatt < 24V -10C Brightness oscillator (CT1, BRIGHT) Ramp amplitude Frequency Line regulation Temperature drift Comparator offset Vco oscillator (RT2, RDELTA) Initial frequency Line regulation Temperature drift VCO pullin range FVCO(OUTA) LINEVCO TCVCO PULLVCO RT2 = 56k 7< Vbatt < 24V -10C < Ta < 70C 47 -0.8 +-0.5 RT2/(RDELTA X 5) 52 0.8 kHz % % % VCT1 FCT1 LINECT1 TCCT1 VOSCT1 7< Vbatt < 24V -10C < Ta < 70C 70 -0.5 =+-3 10 3 130 0.5 V Hz % % mV
Error amplifiers (FB, COMP, CS, CSCOMP) Offset voltage, WRT Vref Input bias current Input offset current Open loop gain Unity gain frequency Output high voltage (comp) Output low voltage Output high voltage (cscomp) VOS IB IOS AOL FT VOH VOL VOH ISOURCE = 50uA ISINK = 500uA ISOURCE = 50uA 4.77 3.39 0.4 -40 1 1 70 1 40 mV nA nA dB Mhz V V V
4
AME, Inc.
AME9001
CCFL Backlight Controller
n Electrical Specifications(contd.)
TA= 25OC unless otherwise noted, VBATT = 15V, CT1=0.01uF, RT2 = 56K
Parameter Output A (OUTA) Peak current Output Low Voltage Output High Voltage Other outputs (OUTAPB, OUTC) Peak current Output Low Voltage Output High Voltage Soft start clamps (SSC, SSV) Initial SSC current Normal SSC current SSV current Other parameters CE high threshold CE low threshold OVP high threshold OVP low threshold CSDET threshold Average supply current Average off current CE HIGH CELOW OVPHI OVPLO VTHCS IBATT IOFF No FET gate current In the application 3.2 200 200 2.5 1.5 0.4 3.55 300 300 6 10 V V V mV mV mA uA ISSCINIT ISSC ISSV 0.4 107 13 1.2 180 25 uA uA uA IPEAKBC VOL VOH ISINK = 10mA ISOURCE = 10mA VDD - .7 1 0.25 Amp V V IPEAKA VOL VOH 0.2mA -5mA 14.4 1 10.8 Amp V V Symbol Test Condition Min Typ Max Units
5
AME, Inc.
AME9001
CCFL Backlight Controller
n Block Diagram
Figure 1. AME9001 Block Diagram
R4 2k 7 - 24V Q1
1 C2 1uF VREF 1 0 3.4V REFERENCE 2 TO CHIP ENABLE LOGIC CE 2
1uA 150uA
VREF VDDOK
5.0V LDO
PNP
24 PNP
CLAMP1 + -
23 SSV C14 1000pF
C3 22nF Vbatt R3 1.2Meg
3 SSC 3
22 BRIGHT TO BRIGHTNESS CONTROL VOLTAGE
4 RDELTA 4
2.5V
F_RANGE RAMP
+ -
21 EA1 COMP C8 47nF 20 FB R7 30k
F_MIN
-
+
VCO 5 C31 0.1F FAULTB
CLK VCO_CONTROL
6 R2 56k RT2
SLOW RAMP GEN.
19 CT1 C4 0.01uF
7 VSS R35
FIRST
+
-
18 VDD C7 4.7uF
CLK
CE
VDDOK
8 R34 OVP
OVP SSC
FAULT CHOP LOGIC NORM
CSDET
17 VDD1
9 CS
16 VBATT Q2
0
C5 10uF
10 CSCOMP EA2
1 PWM
DUTY OUTA 5
15 OUTA D6 T1
+
1.25V
2 6
CHOP
OUTAPB
11 CSDET
OUTPUT DRIVER
OUTC
7
14 OUTAPB Q3-1 Q3-2 D5 D4
12 NC
13 OUTC
R10 604 R9 249
6
AME, Inc.
AME9001
CCFL Backlight Controller
n Application Schematic
Figure 2. Single Tube Application Schematic (7V < Vbatt < 24V) (Note, OVP is disabled in this drawing)
BATTERY R4 2K R1 1Meg R3 1.2 Meg Q1 2N3906 Q2 C9 1uF R8 3.9K
D2 R6 BRIGHT 51K SI3457DV
D3
C2 1uF CE C3 22nF C31 S1 C1 0.1uF 0.1F
1 2 3 4 5 6
AME9001 VREF PNP CE SSC RDELTA FAULT RT2 VSS OVP CS CSCOMP CSDET NC SSV BRIGHT COMP FB CT1 VDD VDD1 VBATT OUTA OUTAPB OUTC
24 23 22 21 20 19 18 17 16 15 14 13
T1 C8 47nF R7 30.1K R20 100K R13 10K D4 OUT OUT +
R2 49.9 K
7 8 9 10 11 12
Q3
C14 1000pF C4 0.01uF VSS C5 10uF C6 0.1uF C7 4.7 uF D6
R10 604 R9 249
D5
IRF7341
R12 5K R11 5K
Bill of Materials
Part # R1 R2 R3 R4 R6 R7 R8 R9 R10 R11 R12 R13 R20 Q1 Q2 Q3 Value 1Meg 49.9k 1.2Meg 2k 51k 30.1k 3.9k 249 604 5k 5k 10k 100k 2N3906 Si3457DV IRF7341 Rating 1/16 watt 1/16 watt 1/16 watt 1/16 watt 1/16 watt 1/16 watt 1/4 watt 1/16 watt 1/16 watt 1/16 watt 1/16 watt 1/16 watt pot. 30V 30V 60V Tolerance 5% 1% 5% 5% 5% 5% 5% 1% 1% 5% 5% 5% Part # C1 C2 C3 C4 C5 C6 C7 C8 C9 C31 D2 D3 D4 D5 D6 T1 Value 0.1uF 1.0uF 22nF 0.01uF 10uF 0.1uF 4.7uF 47nF 1.0uF 0.1uF 1N914 1N914 1N914 1N914 1N914 20:20:2200 Rating 25V 6V 6V 6V 25V 6V 6V 6V 25V 6V Tolerance 20% 20% 5% 5% 20% 20% 20% 5% 10% 20%
7
AME, Inc.
AME9001
CCFL Backlight Controller
does not. Referring to Figures 4 and 5, NMOS transistors Q3-1 and Q3-2 are driven out of phase with a 50% duty cycle signal as indicated by waveforms in Figure 3. The frequency of the NMOS drive signals will be the frequency at which the CCFL is driven. PMOS transistor, Q2, is driven with a pulse width modulated signal (PWM) at twice the frequency of the NMOS drive signals. In other words, the PMOS transistor is turned on and off once for every time each NMOS transistor is on. In this case, when NMOS transistor Q3-1 and PMOS transistor Q2 are both on then NMOS transistor Q3-2 is off, the side of the primary coil connected to NMOS transistor Q3-1 is driven to ground and the centertap of the transformer primary is driven to the battery voltage. The other side of the primary coil connected to NMOS transistor Q3-2 (now "off") is driven to twice the battery voltage (because each winding of the primary has an equal number of turns). Current ramps up in the side of the primary connected to Q3-1 (the "on" transistor), transferring power to the secondary coil of transformer. The energy transferred from the primary excites the tank circuit formed by the transformer leakage inductance and parasitic capacitances that exist at the transformer secondary. The parasitic capacitances come from the capacitance of the transformer secondary itself, wiring capacitances, as well as the parasitic capacitance of the CCFL. Some applications may actually add a small amount of parallel capacitance (~10pF) on the output of the transformer in order to dominate the parasitic capacitive elements. When the PMOS, Q2, is turned off, the voltage of the transformer centertap returns to ground as does the drain of NMOS transistor Q3-2 (the drain of Q3-2 was at twice the battery voltage). Halfway through one cycle, NMOS transistor Q3-1 (that was on) turns off and NMOS transistor Q3-2 (that was off) turns on. At this point, PMOS transistor Q2 turns on again, allowing current to ramp up in the side of the primary that previously had no current. Energy in the primary winding is transferred to the secondary winding and stored again in the leakage inductance Lleak, but this time with the opposite polarity. The current alternately goes through one primary winding then the other. The duty cycle of PMOS transistor Q2 controls the amount of power transferred from the primary winding to the secondary winding in the transformer. Note that the CCFL circuit can work with PMOS transistor Q2 on constantly (i.e. a duty cycle of 100%), although the power would be unregulated in this case.
n Application Notes
Overview The goal of the AME9001 application circuit is to drive a CCFL (cold cathode fluorescent lamp) with a high voltage sine wave in order to produce an efficient and cost effective light source. The most common application for this will be as the backlight of either a notebook computer display, flat panel display, or personal digital assistant (PDA). The CCFL tubes used in these applications are usually glass rods about a foot long and 0.125"-0.25" in diameter. Typically they require a sine wave of 600V and they run at a current of several milliamperes. However, the starting (or striking) voltage can be as high as 2000V. At start up the tube looks like an open circuit, after the plasma has been created the impedance drops and current starts to flow. The IV characteristic of these tubes is highly non-linear. Traditionally the high voltage required for CCFL operation has been developed using some sort of transformerLC tank circuit combination driven by several small power mosfets. The AME9001 application uses one external PMOS, 2 external NMOS and a high turns ratio transformer with a centertapped primary. Lamp dimming is achieved by turning the lamp on and off at a rate faster than the human eye can detect. These "on-off" cycles are known as dimming cycles. Steady State Circuit Operation Figure 1 (and 2) shows PMOS Q2 driving the center tap primary of T1. The gate drive of Q2 is a pulse width modulated (PWM) signal that controls the current into the transformer primary and by extension, controls the current in the CCFL. The gate drive signal of Q2 drives all the way up to the battery voltage and down to 7.5 volts below Vbatt so that logic level transistors may be used without their gates being damaged. An internal clamp prevents the Q2 gate drive (OUTA) from driving lower than Vbatt-7.5V. NMOS transistors Q3-1 and Q3-2 alternately connect the outside nodes of the transformer primary to VSS. These transistors are driven by a 50% duty cycle square wave at one-half the frequency of the drive signal applied to the gate of Q2. Figure 3 illustrates some ideal gate drive waveforms for the CCFL application. Figure 4 and 5 are detailed views of the power section from Figures 1 and 2. Figure 5 has the transformer parasitic elements added while Figure 4
8
AME, Inc.
AME9001
Figure 3. Idealized Gate Drive Waveforms
CCFL Backlight Controller
Q2 Gate
(OUTA)
VBATT VBATT- 7.5V
Q3-1 Gate
(OUTAPB)
5V 0V 5V
Q3-2 Gate
(OUTC)
0V
Figure 4. Power Stage Single Tube Components
(Same component designations used as for Figures 1 and 2)
Figure 5. Power Stage Single Tube Components with parasitic elements
(Same component designations used as for Figures 1 and 2)
OUTA D = 0-100% Vhi = Vbatt Vlo = Vbatt-7.5V F = fosc
VBATT
OUTA D = 0-100% Vhi = Vbatt Vlo = Vbatt-7.5V F = fosc
Q2 T1
VBATT
Q2
Lp
OUTAPB D=50% Vhi = 5V Vlo = 0V F = fosc/2
Lp
Q3-1
Q3-2
OUTC D=50% Vhi = 5V Vlo = 0V F = fosc/2
T1
OUTAPB D=50% Vhi = 5V Vlo = 0V F = fosc/2
Q3-1
1:N
Q3-2
OUTC D=50% Vhi = 5V Vlo = 0V F = fosc/2
L leak
Signals OUTC and OUTAPB are the inverse of each other.
Cparasitic CCFL
Signals OUTC and OUTAPB are the inverse of each other.
CCFL
D5
D4 To Control Circuitry R9+R10
D5
D4
To Control Circuitry
R9+R10
9
AME, Inc.
AME9001
Figures 6,7 illustrates various oscilloscope waveforms generated by the CCFL circuit in operation. These figures show that the duty cycle of the gate drive at Q2 decreases as the battery voltage increases from 9 V to 21 V (as one would expect in order to maintain the same output power). The first three traces in Figures 6 and 7 show the gate drive waveforms for transistors Q2, Q3-1, and Q3-2, respectively. As mentioned before, the gate drive waveform for transistor Q2 drives up to the battery voltage but down only to approximately 7.5 V below the battery voltage. The fourth trace (in Figures 6,7) shows the voltage at centertap of the primary winding (it is also the drain of PMOS transistor, Q2). This waveform is essentially a ground to a battery voltage pulse of varying duty cycle. When the centertap of the primary is driven high, current increases through PMOS transistor, Q2 as indicated by the sixth trace down from the top. In region I the drain current of Q2 is equal and opposite to the drain current of Q3-1 since the gate of Q3-1 is high and Q3-1 is on. In region III the drain current of Q2 will be equal and opposite to the drain current of Q3-2 (not shown). In region II when PMOS transistor Q2 is switched off, the current through this transistor, after an initial sharp drop, ramps back down towards zero. In Figures 6 and 7 the fifth trace down from the top shows the drain voltage of Q3-1. (The trace for NMOS transistor Q3-2, not shown, would be identical, but shifted in time by half a period.) The seventh trace down from the top shows the current through the NMOS transistor Q3-1, which is equal to the current in PMOS transistor Q2 for the portion of time that PMOS transistor Q2 is conducting (see region I, for example). As the current ramps up in the primary winding, energy is transferred to the secondary winding and stored in the leakage inductance Lleak (and any parasitic capacitance on the secondary winding). If the current in the NMOS transistor is close to zero when that NMOS transistor is turned off that means that the CCFL circuit is being driven close to its resonant frequency. If the circuit is being driven too far from its resonant point then there will be large residual currents in the transistors when they are turned off causing large ringing, lower efficiency and more stress on the components. So called "soft switching" is achieved when the MOS drain current is zero while the MOS is being turned off. The driving frequency and transformer parameters should be chosen so that soft switching occurs. Once PMOS transistor Q2 completes one on/off cycle, it is repeated again with the alternate NMOS transistor
10
CCFL Backlight Controller
conducting. This complementary operation produces a symmetric, approximately sinusoidal waveform at the input to the CCFL load, as shown by the bottom trace in Figures 6 and 7. The operation of the CCFL circuit can be divided into 4 regions (I, II, III, and IV) as shown in Figures 6 and 7. Figure 8-1 shows the equivalent transformer and load circuit model for region I. During region I, one of the primary windings is connected across the battery, the current in that winding increases and energy is coupled across to the secondary. No current flows in the other winding because its NMOS is turned off and its body diode is reverse biased. The drain of that NMOS stays at twice the battery voltage because both primary windings have the same number of turns and the battery voltage is forced across the other primary winding. Figure 8-2 shows the equivalent transformer and load circuit model for region II. During region II, the battery is disconnected from the primary winding. In this configuration, current flows through both of the primary windings. The current decreases very quickly at first then ramps down to zero at a rate that is slower than the current ramped up. The initial drop is due to the almost instantaneous change in inductance when current flow shifts from one portion of the primary winding to both portions of the primary. Figure 8-3 shows the equivalent transformer and load circuit model for region III. During region III, the primary winding opposite from the one used in region I is connected across the battery, increasing current in that primary winding but in a direction opposite to that of region I. Energy is coupled across to the secondary as in region I but with opposite polarity. No current flows in the undriven winding because its NMOS is turned off and its body diode is reverse biased. The drain of that NMOS stays at twice the battery voltage because both primary windings have the same number of turns and the battery voltage is forced on the other primary. Region III is, effectively, the inverse of region I. Figure 8-4 shows the equivalent transformer and load circuit model for region IV. During region IV, the battery is disconnected from the primary winding. In this configuration, current flows through both of the primary windings with opposite polarity to that in region II. The current decreases very quickly at first then ramps down to zero at a rate that is slower than the current ramped up. Once again, the initial drop is due to the effective change in inductance when current flow shifts from one portion of the primary winding to both portions of the primary. Region IV is effectively the inverse of region II.
AME, Inc.
AME9001
Figure 6. Typical Waveforms VBATT=9V
CCFL Backlight Controller
VBATT=9V Q2 Gate
(OUTA)
1.5V 5V 0V 5V 0V VBATT 0V VBATT x 2 0 0 IMAX 0 IMAX
Q3-1 Gate
(OUTAPB)
Q3-2 Gate
(OUTC)
Center tap
(Q2 DRAIN)
Q3-1 Drain IDQ2
IDQ3-1 ILAMP
Region I Region II Region III Region IV
Figure 7. Typical Waveforms VBATT=21V
VBATT=21V Q2 Gate
(OUTA)
Q3-1 Gate
(OUTAPB)
13.5V 5V 0V 5V 0V VBATT 0V 2 x VBATT 0V 0A
Q3-2 Gate
(OUTC)
Center tap
(Q2 DRAIN)
Q3-1 Drain
IDQ2 IDQ3-1
IMAX 0A IMAX
ILAMP
Region I
Region II
Region III
Region IV
11
AME, Inc.
AME9001
Figure 8-1. Region I
ILEAK
CCFL Backlight Controller
Figure 8-2. Region II
ILEAK
Cparasitic I
Load
Cparasitic I
Load
Figure 8-3. Region III
ILEAK I Cparasitic
Load
Figure 8-4. Region IV
ILEAK
I
Cparasitic
Load
Figure 9. Steady State Dimming Waveforms (1st Cycle Not Show)
3V BRIGHT 0.5V 5V SSV OV 5V SSC 3V 3V OV Under voltage + Under current Faults Over voltage Faults
CT1
Ignore
Respond
Ignore
Respond
Always Respond to Over voltage Faults
Tube Current (time not to scale)
~ 6ms 12
AME, Inc.
AME9001
Driving the CCFL Unlike other conventional schemes for driving CCFLs the secondary winding of the AME9001 method is not designed to look like a voltage source to the CCFL lamp. The circuit acts more like a current source (or a power source). The circuit will increase the duty cycle of Q2 thereby dumping more and more energy across to the secondary tank circuit until the CCFL tube current achieves regulation or one of the various fault conditions is met. There is no special "striking period" as is necessary with some other schemes. When the circuit starts driving the transformer there is initially no arc struck in the CCFL. The CCFL load looks like an open circuit. The voltage across the CCFL will increase with each successive cycle. Two events may then happen: 1) The gas inside the CCFL will ionize, the voltage across the CCFL will drop, the current through the CCFL will increase, and a stable steady state operating point will be reached. OR.... 2) One of the three fault conditions will be met shutting down the circuit: a) The CCFL tube voltage continues to rise until the OVP pin is higher than 3.5V at which point the circuit will shut down. b) The CCFL voltage fails to rise high enough to keep the undervoltage portion of the OVP pin from tripping. c) The CCFL current fails to rise high enough to keep the undercurrent threshold at the CSDET pin from tripping. Note that condition a) can be met at any time while the AME9001 is enabled. Condition b) and c) can only be met after the SSC pin has crossed 3V AND four successive undervoltage events occur in a row. The SSC pin is pulled to VSS everytime the lamp is turned off, whether for a dimming cycle, user shutdown or fault occurrence. It ramps up slowly depending on the size of capacitor C3 connected to the SSC pin. The period of time when the b) and c) fault checks are disabled is called the "blanking" time. The blanking time occurs from the time SSC starts to ramp up until it reaches 3V. See Figure 9 for some idealized waveforms illustrating the behavior just described. Control Algorithm There are 2 major control blocks (loops) within the IC. The first loop controls the duty cycle of the driving waveform. It senses the CCFL current (Figure 1 or 2, resistor R9 and R10) rectifies it, integrates it against an internal
CCFL Backlight Controller
reference and adjusts the duty cycle to obtain the desired power. This loop uses error amplifier EA1 whose negative input is pin FB and whose output is COMP. The positive input of EA1 is connected to a 2.5V reference. External components, R7 and C8, set the time constant of the integrator, EA1. In order to slow the response of the integrator increase the value of the product (R7 X C8). The second control block adjusts the brightness by turning the lamp on and off at varying duty cycles. Each time the lamp turns on and off is referred to as a "dimming cycle". At the end of each dimming cycle the SSV pin is pulled low, this forces COMP low as well due to the clamping action of Clamp1 shown in Figure 1. At the beginning of a new dimming cycle COMP tries to increase quickly but it is clamped to the voltage at the SSV(softstart voltage) pin. A capacitor on the SSV pin (C8, Figure 1), which is discharged at the end of every dimming cycle, sets the slew rate of the voltage at the SSV pin, and hence also the maximum positive slew rate of the COMP pin. ["Dimming cycle" is explained more fully below] The BRIGHT and CT2 pins A user-provided voltage at the BRIGHT pin is compared with the ramp voltage at the CT1 pin (See Figure 10). As the voltage at BRIGHT increases the duty cycle of the dimming cycle (and the brightness of the CCFL) increase. The frequency of the dimming cycles is set by the value of the capacitor at pin CT1 (C4 in Figure 1 and 2) and it is also proportional to the current set by resistor R2. Setting C4 equal to 0.01uF and R2 equal to 47.5k yields a dimming cycle frequency of approximately 125Hz. The frequency should vary inversely with the value of C4 according to the relation: Frequency(Hz) = 1/[17 X R2 X C4] The brightness may also be controlled by using a variable resistor in place of R10 (See Figure 11). In this case the BRIGHT pin should be pulled to VDD so that the CCFL remains on constantly. This method can lead to flicker at low intensities but it is easy to implement. Harmonic distortion may also increase since the duty cycle of the waveform at the gate of Q2 will vary greatly with brightness. When using burst brightness control the duty cycle of the driving waveforms should not vary because the CCFL is running at 100% power or it is turned off. As long as the battery voltage does not change the duty cycle of the driving waveform also does not change greatly. This means that harmonic distortion can be minimized by optimizing the frequency and transformer characteristics for a particular duty cycle rather than a large 13 range of duty cycle.
AME, Inc.
AME9001
Figure 10. Duty Cycle Dimming
CCFL Backlight Controller
Outside Chip
Inside Chip
BRIGHT
+ -
CHOP CHOP causes the CCFL to turn on and off periodically.
+ -
Brightness control voltage CT1
3V C4 500mV
S Q R
+
Figure 11. Alternative Brightness Control
Inside Chip
Outside Chip
This method disables duty cycle dimming BRIGHT CHOP Always Hi 5V CT Maximum current= R1//(2R+R) COMP K + FB RF 2.5V 2R + To Fault Control Logic R 250mV CSDET R1 R2 Minimum current= (R1+R2)//(2R+R) K + T1
To PWM Comparator
-
14
AME, Inc.
AME9001
RT2, RDELTA pin The frequency of the drive signal at the gate of Q2 is determined by the VCO shown in Figure1. A detail of the VCO is shown in Figure 12. The user sets the minimum oscillator frequency with the resistor connected to pin RT2 (R2 in the figures). The relation is: Frequency (Hz) = 2.8E9 / R2 (ohms) You can see from the formula that as R2 is increased the frequency gets smaller. All other things being equal, as the battery voltage increases the duty cycle of the driving waveform at the gate of Q2 decreases. Often the waveform becomes less sinusoidal as the duty cycle decreases. To avoid this unwanted effect and to ensure that the FETs remain in a "soft switching mode" the application described here adjusts the oscillator frequency upwards as the battery voltage increases. An increase in driving frequency is desirable to minimize harmonic distortion of the output waveform as the duty cycle of the drive signal at the gate of Q2 decreases. Resistor R3 controls how much the oscillator frequency increases as a function of battery voltage. The relationship is: Delta frequency (Hz) = 3.44E8 * (Vbatt -1.25) / R3 You can see from the formula that the frequency will increase as the battery voltage increases. The amount of this increase is set by R3. In the current application EA2 (Figure 1) is connected in unity gain which will provide a constant 1.25V at the CSCOMP pin and subsequently at the Vco_control and Rdelta input of the VCO. Even though Vco_control is a fixed voltage the frequency of the VCO still modulates because the current through R3 changes as the battery voltage increases and hence increases the charging current into the timing capacitor of Figure 12 thereby increasing the oscillator frequency. Supply voltage pins, VDD and PNP Most of the circuitry of the AME9001 works at 5V with the exception of one output driver. That driver (OUTA) and its power pad (VBATT) must operate up to 24V although the OUTA pad may never be forced lower than 8 volts away from the VBATT pin. The OUTA pin is internally clamped to approximately 7.5 volts below the Vbatt pin. The AME9001 uses an external PNP device to provide a regulated 5V supply from the battery voltage (See Figure 13). The battery voltage can range from 7V< VBATT < 24V. The PNP pin drives the base of the external PNP device, Q1. The VDD pin is the 5V supply into the chip.
CCFL Backlight Controller
A 4.7uF capacitor, C7, bypasses the 5V supply to ground. If an external 5V supply is available then the external PNP would not be necessary and the PNP pin should float. When the CE pin is low (<0.4V) the chip goes into a zero current state. The chip puts the PNP pin into a high impedance state which shuts off Q1 and lets the 5V supply collapse to zero volts. When low, the CE pin also immediately turns PMOS transistor Q2 off, however transistors Q3-1 and Q3-2 will continue to switch until the 5V has collapsed to 3.5V. Allowing the Q3 transistors to continue to switch for some time after Q2 is turned off permits the energy in the tank circuit to be dissipated gradually without any large voltage spikes. The VDD voltage is sensed internally so that the switching circuitry will not turn on unless the VDD voltage is larger than 4.5V and the internal reference is valid. Once the 4.5V threshold has been reached the switching circuitry will run until VDD is less than 3.5V (as mentioned before). Output drivers (OUTA, OUTAPB, OUTC) The OUTAPB and OUTC pins are standard 5V CMOS driver outputs (with some added circuitry to prevent shoot through current). The OUTA driver is quite different (See Figure 14). The OUTA driver pulls up to VBATT (max 24V) and pulls down to about 7.5 volts below VBATT. It is internally clamped to within 7.5V of VBATT. On each transition the OUTA pad will sink/source about 500mA for 100nS. After the initial 100ns burst of current the current is scaled back to 1mA(sinking) and 12mA(sourcing). This technique allows for fast edge transitions yet low overall power dissipation. Fault Protection, the OVP and CSDET pins The AME9001 checks for 3 different fault conditions. When any one of the fault conditions is met then the circuit is latched off. Only a power on reset or toggling the CE pin will restore the circuit to normal operation. (See Figure 15 for a schematic of the FAULT circuitry.) The first fault condition check can be used to detect overvoltages at the CCFL. Specifically, if the OVP pin is above 3V then this fault condition is detected. The first fault condition is always enabled, thus there is no blanking period, or 4 succesive faults required for shutdown. The second fault condition check can be used to ensure that the CCFL voltage is above some certain voltage
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AME9001
level on a cycle by cycle basis. If the OVP pin does not cross its 250mV threshold once during four successive clock periods in a row then this fault will be triggered. This protection is disabled while the SSC ramp is below 3V such as during the initial start up and at the beginning of every dimming cycle. The 1st SSC ramp after power on reset (or CE enabled) is 150 times slower than subsequent start up ramps. This slow first ramp allows more time for a cold tube to strike before the chip senses a fault and shuts down. In order to enable the first two fault condition checks then the OVP pin must, indirectly, sense the high voltage at the input of the CCFL. The actual CCFL voltage must be reduced by using either a resistor or capacitor divider such that in normal operation the voltage at OVP is higher than 250mV but lower than 3V. The third fault condition check can be used to monitor the CCFL current. Specifically, it checks whether the voltage at the CSDET pin is higher than 250mV. If CSDET does not cross its 250mV threshold once during 4 successive clock cycles then this fault will be triggered. This protection is disabled while the SSC ramp is below 3V, such as during the initial start period, and at the beginning of every subsequent dimming cycle. This fault condition is used to check that a reasonable minimum amount of current is flowing in the tube. Please note that the application circuit of Figure 2 uses a resistor divider to drive the OVP pin to a voltage above 250mV but below 3V. That effectively disables the first two fault condition checks. Some applications may not require all 3 fault condition checks. The third fault condition is usually sufficient to detect open circuit faults. Figure 15 is a simplified schematic of the fault protection circuitry used in the AME9001. Most of the signals have been previously defined however some need a little explanation. The VDDOK signal is a power OK signal that goes high when the 5V supply (VDD) is valid. The CHOP signal stops the operation of the switching circuitry once every dimming cycle for burst mode brightness control. The output signal, FIRST, is high during the first burst cycle after power is turned on. It causes the SSC pin to source 150 time less current than on subsequent dimming cycles. The NORM signal is an enable signal to the switching circuitry. When it is high the circuit works normally. When it is low the switching circuitry stops. SSC and SSV pins
16
CCFL Backlight Controller
The SSC pin's primary role is to define a time period in which the 2nd and 3rd fault condition (previously described) are disabled. This period of time is called the blanking interval. During the initial start up period after a power on reset or just after a low to high transition on the CE pin the SSC pin sources 1uA into an external capacitor(C3). The voltage on SSC ramps upwards towards VDD. The blanking interval is defined as the time during which V(SSC) < 3V. Once the voltage at SSC crosses 3V the blanking interval is finished and all three fault condition checks are enabled. At the beginning of the next dimming cycle the SSC pin is pulled to VSS then allowed to ramp upwards again, however during all subsequent dimming cycles the SSC pin sources 150uA instead of 1uA as was the case of the first cycle. In effect, the two different sourcing currents means that the first blanking interval is 150 times as long as all subsequent blanking intervals. This allows a cold tube more time to strike before shutting down due to an undercurrent or undervoltage fault. (Please see figure 9 for further clarification of the blanking function.) The SSV pin (like the SSC pin) is pulled to ground at the beginning of every dimming cycle then sources 20uA into an external capacitor. This creates a 0 to 5 volt ramp at the SSV pin. This ramp is used to limit the duty cycle of the PWM gate drive signal available at the OUTA pin. The SSV pin accomplishes duty cycle limiting by clamping the COMP voltage to no higher than the SSV voltage. Because the magnitude of the COMP voltage is proportional to the duty cycle of the PWM signal at OUTA the duty cycle starts each dimming cycle at zero and slowly increases to its steady state value as the voltage at SSV increases. (Figure 9 shows this operation.) This type of duty cycle limiting is commonly called "soft-start" operation. Soft start operation lessens overshoot on start up because the power increases gradually rather than immediately. Unlike the SSC pin the current sourced by the SSV pin remains approximately 20uA during ALL dimming cycles. Ringing Due to the leakage inductances of transformer T1 voltages at the drains of Q3 can potentially ring to values substantially higher than the ideal value (which is twice the battery voltage). The application schematic in figure 2 uses a snubbing circuit to limit the extent of the ringing voltage. Components C9,R8,D2 and D3 make up the snubbing circuit. The nominal voltage at the common
AME, Inc.
AME9001
node is approximately twice the battery voltage. If either of the drains of Q3 ring above that voltage then diodes D2 or D3 forward bias and allow the ringing energy to charge capacitor C9. Resistor R8 bleeds off the extra ringing energy preventing the voltage at the common node from increasing substantially higher than twice the battery voltage. The extra power dissipation is: P(dissipated) = Vbatt2 / R8 For the example, in Figure 2, the power dissipation of the snubber circuit with Vbatt=15V is 58mW or approximately 1% of the total input power. The value of R8 can be optimized for a particular application in order to minimize dissipated power. Excessive ringing is usually a sign that the driving frequency is not well matched to the resonant characteristics of the tank circuit. In a well designed application a snubber circuit will not be necessary. Layout Considerations Due to the switching nature of this circuit and the high voltages that it produces this application can be sensitive to board parasitics. In fact, one of the advantages, of this design is that the circuit uses the parasitic elements of the application as resonant components, thus eliminating the need for more added components. Particular care must be taken with the different gounding loops. The best performance has been obtained by using a "star" ground technique. The star technique returns all significant ground paths back to the center of the "star". Ideally we would place the center of the star directly on the VSS pin of the AME9001. The bypass capacitors would, ideally, be connected as close to the center of the star as possible. The schematic in Figure 2 attemps to show this star ground configuration by bringing all the ground returns back to the same point on the drawing. Separate ground returns back to the star are especially important for higher current switching paths.
CCFL Backlight Controller
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AME, Inc.
AME9001
Figure 12. VCO Detail
CCFL Backlight Controller
R3 Vco_Control
0 I_in
RDELTA 1.25V CS
VBATT
50:1 curent divider
I_out
1.5V RT2 R2 VSS
+ -
0
RAMP 3.0V
+ -
CSCOMP
CLK
Inside chip Outside chip
Figure 13. LDO Detail
Inside Chip
Outside Chip
PNP
1
R4 Q1
VBATT
VDDOK
2
-
To Fault Logic
VDD
27 < VBATT < 24
+ EN 2.5V
Start UP
CE
To user enable circuitry C7 4.7F
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AME, Inc.
AME9001
Figure 14. OUTA Driver Circuitry
Inside Chip
Vbatt
CCFL Backlight Controller
Outside Chip
BV=5V
BV=4V BV=7.5V
OUTA PWM SIGNAL
External PMOS, Q2
100nS
100nS
1mA
Figure 15. Fault Logic
VDD VDDOK
All inside the Chip
CE SSC 3.3V BRIGHT CT1
+ -
BLANK
CHOP
3V CLK 250mV CSDET
+ CLK RESB Q
R CLR Q S SET Q
2 BIT COUNTER
FIRST
S SET Q
OVP 3.3V
+ + -
CLK RESB Q
R CLR Q
NORM
2 BIT COUNTER
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AME, Inc.
AME9001
Application Component Description Figure 2 shows one typical application circuit for single tube drive. Figure 16 shows a similar application circuit that is optimized for 4 tube operation. Similar component designations are used on similar components both in figure 2 and figure 16 as well as throughout this application note. R1 - Weak pull up for the chip enable (CE) pin. The voltage at CE will normally rise to 5 volts for a 12V supply. Pull down on the CE node to disable the chip and put it into a zero Idd mode. If the user wishes to drive node CE with 3.3 or 5.5 volt logic then R1 is not necessary C1 - This capacitor acts to de-bounce the CE pin and to slow the turn on time when using R1 to pull up CE. This can be useful when the battery power is disconnected from the circuit in order to turn the circuit off, when the battery is reconnected the chip does not immediately turn on which allows the battery voltage to stabilize before switching starts. If the user is actively driving the CE pin then the C1 capacitor may not be necessary. R3 - This resistor connected to the RDELTA pin determines how much the oscillator frequency will change with battery voltage. The relation, which is found earlier in the text, is: Delta frequency (Hz) = 3.44e8 * (Vbatt-1.25) / R3 C2 - This 1uF capacitor bypasses and stabilizes the internal reference C3 - This capacitor determines the length of the blanking interval at the beginning of every dimming cycle and when the chip is first powered on. At the end of every dimming cycle this capacitor is discharged to VSS then allowed to charge up at a rate controlled by its internal current source and C3. When the voltage on C3 (pin SSC) crosses 3 volts the blanking interval is over and all fault checks are enabled. The charging current into C3 (out of pin SSC) is normally 150uA but for the very first cycle after the chip is enabled the current is only 1uA. So the blanking interval for the first cycle is: T(seconds) =( C3) * (3volts) / (1e-6amps)
CCFL Backlight Controller
And for subsequent dimming cycles the blanking interval is: T(seconds) = (C3) * (3volts) / (150e-6amps) C31 - This capacitor is used to prevent chatter on the FAULTB pin during start up R2 - R2 sets the frequency of the oscillator that drives the FETs. The relation between R2 and frequency, that was found previously in the text, is: Frequency (Hz) = 2.8e9/R2 R2 = 56K yields approximately 50khz
Note: that this is the frequency of the NMOS(Q3) gate drive. The PMOS(Q2) gate drive is exactly twice this value.
C30 - This capacitor filters signals feeding the OVP pin. By increasing C30 the user makes the circuit less sensitive to fast overvoltage conditions. R4 - This resistors pulls the base of Q1 up to Vbatt. Coupled with Q1 and C7 it is part of the 5V regulator that supplies the working power to the AME9001. When the PNP pin is turned off the base of Q1 is pulled high through R4, turning off Q1 and allowing the voltage at the VDD node (VSUPPLY) to decay towards zero. Q1 - This common PNP transistor (2n3906 is adequate) forms part of the 5V linear regulator which supplies power to most of the AME9001. R6 - This resistor, together with adjustable resistor R20, form a resistor divider that divides the regulated 5V down to some lower voltage. That lower voltage is used to drive the BRIGHT pin which, in turn, determines the duty cycle of the the dimming cycles and therefore the brightness of the lamps. If the user is driving the BRIGHT pin with his/her own voltage source then R6 and R20 are not necessary. C6 - This capacitor bypasses the BRIGHT pin. A noisy BRIGHT pin can cause unwanted flicker.
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AME9001
R20 - see description of R6 C14 - This capacitor sets the slope of the soft-start ramp on pin SSV. The voltage at SSV limits the duty cycle of the Q2 gate drive signal available at pin OUTA. The voltage at the COMP node is internally clamped to the SSV node. Therefore the C14 cap limits how fast SSV, and hence, COMP can increase. The charging current out of SSV is approximately 20uA so the rate of change of the SSV voltage is: SSV(Volts/sec) = (20e-6amps) / C14 C5 - This is the main battery bypass capacitor. C4 - This capacitor sets the frequency of the dimming cycles according to the relation: Dim Cycle Freq(Hz) = 1 / [(17) * (R2) * (C4)] Note that the frequency is also a function of R2. So the frequency of the main oscillator and the frequency of the dimming oscillator are not independent. C7 - This capacitor is the load capacitor for the 5V linear regulator. As such it also bypasses the 5V supply and should be laid out as close to the AME9001 as possible. C8 - This capacitor, in combination with resistor R7, determines the time constant for the error amplifier (integrator) EA1. The integrator is the primary loop stabilizing element of the circuit. In general this application is tolerant of a large range of integrator time constants. Increase the (C8 X R7) product to slow down the loop response. R7 - see C8 D6 - This diode can catch any negative going spikes on the drain of Q2. This diode is NOT strictly necessary. This is NOT a freewheeling diode such as in a buck regulator. Since the primary windings are tightly coupled to each other the body diodes of Q3-1 and Q3-2 keep their own drains clamped to VSS as well as the drain of Q2. The spikes that diode D6 may catch are of short duration and small energy. Q2 - This is a PMOS device. By modulating its gate drive duty cycle the power into the transformer, and then into the load, can be controlled. The breakdown of this device must be higher than the highest battery voltage that the application will use. The peak current
CCFL Backlight Controller
load is roughly twice the average current load. Q3-1, Q3-2 - These are NMOS devices. They are driven alternately with 50% duty cycle gate drive. The frequency of the gate drive is one half of the gate drive frequency of Q2. The gate drive is from 0 to 5 volts. The breakdown voltage of these devices must be at least twice the highest battery voltage. Peak current is roughly twice the average supply current. C9,R8,D2,D3 - These devices form a snubber circuit that can dissipate ringing energy. The snubber circuit is not strictly necessary. In fact a well designed circuit should not require these devices. (These elements were described in more detail earlier.) R9, R10 - The sum of R9 and R10 sets the current in one CCFL tube. As the sum of R9 and R10 decreases the tube current goes up, as the sum of R9 and R10 increase the tube current goes down. The RMS tube current is roughly: Irms = 6V / (R9 + R10) R9 and R10 also form a voltage divider that drives the CSDET pin. The purpose of the voltage divider is to keep the maximum voltage at CSDET under 5 volts under all conditions. The CSDET pin checks to see if there is any current in the CCFL. If the voltage at CSDET is larger than 250mV once every clock cycle then the AME9001 assumes there is current in the CCFL and allows operation to continue. D4,D5 - These diodes rectify the current through the CCFL to provide a positive voltage for regulation by the error amplifier, EA1.
The following components are only used for multiple tube operation:
Q4,Q5 - These bipolar devices buffer the gate of Q2. That allows Q2 to be made much bigger without dissipating more power or increasing the cost of the AME9001. Q4 is an NPN transistor and Q5 is a PNP transistor. R35,R36,D16 - These devices form a voltage divider and rectifier combination to sense higher than normal
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AME, Inc.
AME9001
transformer operating voltages. ( This operation is explained in more detail below.) R38,R39,D17 - See R35,R36,D16 description above. You can diode "OR" as many of these divider/rectifier circuits as you have different transformers. Each time you add another double output transformer you must add another set of these resistors and diode networks. ( This operation is explained in more detail in the next section.) Multiple Tube Operation The AME9001 is particularly well suited for multiple tube applications. Figure17 shows the power section of a two tube application. The major difference between this application and the single tube application is the addition of another secondary winding on the transformer. The primary side of the transformer and its associated FETs are exactly the same as the single tube case although the FETs may need to be resized due to the increased current in two tube applications. The secondaries are wound so that the outputs to the CCFL are of opposite phase (see Figure 18). When the voltage at one secondary output is high (+600 volts) the other secondary output should be low (-600 volts). The other secondary terminals are connected to each other. In a balanced circuit the voltage at the connection of the two secondaries will, ideally, be zero. Of course in a real application the voltage at the connection of the two secondaries will deviate somewhat from zero. The common connection of the secondaries offers us an excellent method to check for high voltage fault conditions. As previously mentioned, when the CCFL loads are balanced then the voltage at the common connection of the secondaries will remain relatively low compared to the high voltages available at the other terminals of the secondaries. However, when the loads become unbalanced, as would be the case if a tube was broken or there was a bad connection, then the voltage at the common point of the secondaries will be much higher than its normal value. It is simple to size resistors R35 and R36 in Figure17 such that in normal operation the OVP voltage remains below 3 volts while during abnormal operation the OVP voltage goes above 3 volts causing a system fault.
CCFL Backlight Controller
The multi-tube configuration is modular. Since each double transformer can drive two CCFLs it is possible to construct 2, 4, 6..... tube solutions using the basic architecture. Of course the FETs must be properly sized to handle the increased current. Figure19 shows a 4 tube application. In this configuration the common secondary connection (the node NOT connected to the lamp) is made with the opposite transformer. In this way the secondary current from the winding on the first transformer should be equal to the secondary current of its companion winding on the second transformer. In the case of 4 lamps driven by two transformers there are two sets of common secondary nodes. Each set drives a resistor divider ( in this case R35/R36 and R38/R39) whose outputs are diode "OR'd" together at the OVP node. That way either transformer that experiences an overvoltage fault condition will be able to pull up the OVP node and cause the system to shut down. The concept can be expanded for more than four tubes. For every 2 extra tubes that need to be added the user must add one more transformer, a resistor divider, and a small diode such as a 1N914. Figure 16 shows a complete multi-tube architecture schematic. Analogous components have been given the same numbers as in the single tube schematic. There is really very little difference between the the single tube configuration and the multi-tube version. Transistors Q4 and Q5 are added to buffer the high side drive OUTA. This may be necessary because the PMOS devices for larger current applications have larger gate drive requirements. Capacitor C30 is added to the OVP node so that unwanted high frequency signals do not couple to the OVP node and cause an undesired shutdown. The MOS transistors are sized bigger for the 4 tube application as would be expected. The peak currents are much higher so the Vbatt bypassing capacitor must be increased as well. The schematic shows C5 as a 100uF capacitor but higher values such as 220uF are not uncommon in order to minimize ripple on Vbatt.
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AME, Inc.
AME9001
CCFL Backlight Controller
Figure 16. Four Tube Application Schematic
BATT R4 2K Q4 NPN 2N3904
3 1
R3 1.2Meg R1 1Meg
Q1 PNP 2N3906
R8 C9 3.9k 1uF SNUB D2 IN914
Q2 5602
2, 4
Q5 PNP 2N3906 R6 51k
D3 IN914
BRIGHT
10
10
3
3
4
9
4
9
T1 2XTRANS
12 12 2 2 5 7 5 7
T2 2XTRANS
LX
R35 400k D16 OVP D17 IN914 R36 3k IN914
R38 400k
C2 1uF CE
Vref
U1 1 24 23 22 21 20 19 18 17 16 15 14 13
C3 0.022uF C31 0.1uF R2 C1 0.1u 49.9k
AME9001 Vref PNP 2 CE SSV 3 SSC BRIGHT 4 RDELTA COMP 5 FAULTB FB 6 RT2 CT1 7 VSS VSUPPLY 8 OVP DUTY 9 CS VBATT 10 CSCOMP OUTA 11 CSDET OUTAPB 12 CSPEAK OUTC
R39 3k
C8 47nF VDD C14 1000p R20 100k R7 30.1k Q3-1 IRFR3303 Q3-2 IRFR3303 D5 IN914 D4 IN914 R10 852 OUT-1
C30 100p
C4 0.01uF
C5 + 100uF
C6 0.1uF
C7 4.7uF
D6 1N5819
R9 303
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AME, Inc.
AME9001
Figure 17. Double CCFL Power Section
VBatt OUTA Q2 T1
CCFL Backlight Controller
OUTB
Q3-1
R35 R36 OVP
Q3-2
OUTC
C8
Outside Chip
D5 D4 R10 2.5V R9 CSDET To Fault Logic 250mV R7 FB EA1 COMP
Inside Chip
To PWM Comparator
Figure 18. Double transformer construction detail
Low voltages
Secondary
Primaries
Secondary
Large Positive (Negative) Voltage
Large Negative (Positive) Voltage
Common Core
Low voltages in the center
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AME, Inc.
AME9001
Figure 19. Four Tube Power Section
CCFL Backlight Controller
OUTA
T2
Q2 VBatt R38 R39 OUTAPB To OVP R35 R36
Q3-1 T1 To R7 and C8 integrator Q3-2
D4 D5 R10 To CSDET R9
OUTC
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AME, Inc.
AME9001
CCFL Backlight Controller
n Package Dimension
QSOP24
Top View D
SYMBOLS A A1
E1 E
MILLIMETERS MIN
1.524 0.101
INCHES MIN
0.060 0.004
MAX
1.752 0.228
MAX
0.069 0.009
A2 b b1 c c1 D ZD E E1 L
1.473REF 0.203 0.203 0.177 0.177 8.559 0.304 0.279 0.254 0.228 8.737
0.058REF 0.008 0.008 0.007 0.007 0.337 0.012 0.011 0.010 0.009 0.344
Bottom View K
0.838REF 5.791 3.810 0.406 6.197 3.987 1.270
0.033REF 0.228 0.150 0.016 0.244 0.157 0.050
J
L1 e J
Side View ZD A2 A b e
See Detail A
0.254BSC 0.635BSC 1.27REF 1.27REF 0o 5o 0o 0.33 x 45 8o 15 o o
0.010BSC 0.025BSC 0.050REF 0.050REF 0o 5o 0o 8o 15o -
K e e1 e2 R
A1
0.013 x 45 o
End View
Detail A b1 c 1
R c 2
L1
c1
(c)
c
L
c
(b)
26
Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. (c) AME, Inc. , September 2003 Document: 2006-DS8803/8814-G
E-Mail:Longman@rccn.com.cn
Address:Room 2101, No.2 Building Yulan garden, No.50 Puhuitang Rd,Shanghai,PRC zip:200030 Tel : 86-21-64285731/32 ext:8033 Fax: 86-21-64393342 Sales Manager:Longman Xu


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